英语翻译The experimental setup used for the etching is described in detail elsewhere.The GaN samples were illuminated during the etching by a 350 W Hg arc lamp with a typical intensity of 25 mW/cm2 at 365 nm.The electrolyte consisted of dilute aq
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英语翻译The experimental setup used for the etching is described in detail elsewhere.The GaN samples were illuminated during the etching by a 350 W Hg arc lamp with a typical intensity of 25 mW/cm2 at 365 nm.The electrolyte consisted of dilute aq
英语翻译
The experimental setup used for the etching is described in detail elsewhere.The GaN samples were illuminated during the etching by a 350 W Hg arc lamp with a typical intensity of 25 mW/cm2 at 365 nm.The electrolyte consisted of dilute aqueous solutions of KOH with concentrations in the range of 0.002–0.006 M.The solutions were magnetically stirred during the etching.The etch rate of the GaN under these conditions was approximately 25 nm/min.
英语翻译The experimental setup used for the etching is described in detail elsewhere.The GaN samples were illuminated during the etching by a 350 W Hg arc lamp with a typical intensity of 25 mW/cm2 at 365 nm.The electrolyte consisted of dilute aq
在用于刻蚀的实验装备已经在其他地方详细描述.GaN（氮化镓）样品在356nm处有着25 mW/cm2 的典型强度的350瓦的汞弧灯照射下进行刻蚀.电解液是浓度在0.002–0.006M（这应该是摩尔每升吧）之间的稀KOH水溶液.在刻蚀中用磁力搅拌器搅拌溶液.在这个条件下GaN的刻蚀速率大约是25 nm/min.
（希望有所帮助吧）
不会~~找个英语专业的应该可以
《道
实验装置用于蚀刻详细描述的地方，甘样本照明在蚀刻由一个350瓦的汞弧灯与一个典型的强度为25毫瓦/平方厘米在365纳米。该电解质包括稀水溶液与氢氧化钾浓度范围在0.002–0.006米解决了磁力搅拌在蚀刻。蚀刻率的甘在这些条件下，约25米/分钟。
就是这样！记得采纳哦！呃.........这个我也会......那帮不上你了！哈哈 是这个翻译不准确？？？先不说专业词汇，这个你觉得能读得通？...
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实验装置用于蚀刻详细描述的地方，甘样本照明在蚀刻由一个350瓦的汞弧灯与一个典型的强度为25毫瓦/平方厘米在365纳米。该电解质包括稀水溶液与氢氧化钾浓度范围在0.002–0.006米解决了磁力搅拌在蚀刻。蚀刻率的甘在这些条件下，约25米/分钟。
就是这样！记得采纳哦！
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