半导体物理与器件题目,求费米能级the electron concentration in silicon at 300K is n0=2*10^5 cm^-3,(a)determine the position of theFermi level with respect to the valence band energy level; (b) determin p0; (c) is this n- or p- type mater
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半导体物理与器件题目,求费米能级the electron concentration in silicon at 300K is n0=2*10^5 cm^-3,(a)determine the position of theFermi level with respect to the valence band energy level; (b) determin p0; (c) is this n- or p- type mater
半导体物理与器件题目,求费米能级
the electron concentration in silicon at 300K is n0=2*10^5 cm^-3,(a)determine the position of theFermi level with respect to the valence band energy level; (b) determin p0; (c) is this n- or p- type material?
半导体物理与器件题目,求费米能级the electron concentration in silicon at 300K is n0=2*10^5 cm^-3,(a)determine the position of theFermi level with respect to the valence band energy level; (b) determin p0; (c) is this n- or p- type mater
(a)n0=ni*exp[(Ef-Ei)/K*T],Ef是费米能级,Ei是本征费米能级,ni为300k时Si的本征载流子浓度,这个可以查书上的图得到,大约是1.5*10^10,这里计算主要计算能级差,结果可以表述为Ef在Ei下方几eV处.
(b)根据质量作用定理,ni^2=p0*n0,从而求得p0的大小
(c)显然p0>>n0,因此半导体为p-type
这个可以用作图法 用这个公式 在excel里做个图 with respect to the valence band energy level的意思是,根据价带和导带的能级写出费米能级 因为你计算得到的都是费米能级和导带或者禁带的差值,必须用实际的导带或者禁带的值减去或者加上这个差值才是实际的值