英语翻译The Co(25nm)/Al(dAl)-Ox/Ni80Fe20(25nm),trilayers,with a Al thickness variation of 0.5 nm ≤ dAl ≤ 5 nm,were evaporated in ultra-high vacuum onto oxidised Si wafers.The simultaneous measurements of the magnetic hysteresis loops and thic
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英语翻译The Co(25nm)/Al(dAl)-Ox/Ni80Fe20(25nm),trilayers,with a Al thickness variation of 0.5 nm ≤ dAl ≤ 5 nm,were evaporated in ultra-high vacuum onto oxidised Si wafers.The simultaneous measurements of the magnetic hysteresis loops and thic
英语翻译
The Co(25nm)/Al(dAl)-Ox/Ni80Fe20(25nm),trilayers,with a Al thickness variation of 0.5 nm ≤ dAl ≤ 5 nm,were evaporated in ultra-high vacuum onto oxidised Si wafers.The simultaneous measurements of the magnetic hysteresis loops and thickness-dependent electric conductance were performed in-situ during deposition process.They were supplemented with surface topography and cross section images by atomic force microscopy and high-resolution transmission electron microscopy,respectively.We have shown that for an Al thickness of about 1.2 nm a transition from strongly ferromagnetically coupled Co and Ni80Fe20 characterised with single hysteresis loops to well separated magnetisation loops evident for weakly coupled layers occurs.The conductance measurements performed during deposition process as well as during 24 h oxidation process of the Al layer led us to the conclusion that independently on Al thickness nominally only 0.5 nm thick Al layer is oxidised.The influence of different buffer layers (Cu,Au) on magnetisation reversal characteristics is also shown
英语翻译The Co(25nm)/Al(dAl)-Ox/Ni80Fe20(25nm),trilayers,with a Al thickness variation of 0.5 nm ≤ dAl ≤ 5 nm,were evaporated in ultra-high vacuum onto oxidised Si wafers.The simultaneous measurements of the magnetic hysteresis loops and thic
在的 Co(25nm)/Al(dAl)-Ox/Ni80Fe20(25nm) trilayers 的 0.5 纳米 ≤ 达 ≤ 5 · 厚度变纳米,被氧化的硅晶片到超真空蒸发.磁滞循环和依赖于厚度的电导率的同时测量沉积过程中被执行的现场.他们均附有表面的地形和截面图像原子力显微镜和高分辨率的透射电子显微镜,分别.我们已显示,一 · 厚度,大约 1.2 的好分开磁化循环明显,因为弱耦合的层出现循环的纳米强烈 ferromagnetically 耦合的合作和 Ni80Fe20 转换特色的单一滞后.导电性测量沉降过程中执行以及 · 层 24 小时氧化过程中使我们的独立 · 厚度名义上只 0.5 纳米厚 · 层氧化的结论.不同的缓冲层铜金) 对磁化逆转特性还将显示提问者:弗尔曼
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