英语翻译GTO的多元集成结构除了对关断有利外,也使得GTO比普通晶闸管开通过程加快,承受di/dt能力增强.因为在开通过程中电流总是先从门极近开始,逐步扩大导通面积.每个GTO元的阴极面积很小

英语翻译GTO的多元集成结构除了对关断有利外,也使得GTO比普通晶闸管开通过程加快,承受di/dt能力增强.因为在开通过程中电流总是先从门极近开始,逐步扩大导通面积.每个GTO元的阴极面积很小
英语翻译
GTO的多元集成结构除了对关断有利外,也使得GTO比普通晶闸管开通过程加快,承受di/dt能力增强.因为在开通过程中电流总是先从门极近开始,逐步扩大导通面积.每个GTO元的阴极面积很小,众多的GTO元同时进行着开通过程,阴极导通面积的扩展速度当然比一元结构的普通晶闸管快,承受di/dt能力也强.
GTO的多元集成结构对制造工艺提出了极高的要求,它要求必须保持所有的GTO元特性一致.开通速度不一致时,首先开通的GTO元半因承担过大的电流而损坏；关断速度不一致时,最迟关断的GTO元也会因过电流而损坏.
同志你翻译的太过火啦,咋连不要在线翻译也译上啦,下次好好看一下,在线翻译我也会,不用捞烦大峡

英语翻译GTO的多元集成结构除了对关断有利外,也使得GTO比普通晶闸管开通过程加快,承受di/dt能力增强.因为在开通过程中电流总是先从门极近开始,逐步扩大导通面积.每个GTO元的阴极面积很小
GTO diverse integration structure in addition to to pass in addition to break beneficial, also make the GTO compare a common tube of 晶闸 to break through process to speed, bear the di/dt ability to build up.Because electric current during the period of breaking through always first very near beginning from the door, extend to lead an area gradually.Each cathode area of GTO dollar is very small, numerous GTO dollar is in the meantime carry on breaking through process, the cathode leads the common Jingzha Tube tube that an area expands speed to certainly compare 1 dollar structure quick, bear the di/dt ability also strong.
The GTO diverse integration structure put forward a very high request towards making a craft, its requesting had to be kept all characteristics consistent.While breaking through the speed inconformity, the GTO dollar half broken through first damages because of undertaking big electric current;When pass broke the speed inconformity, the pass broke at the latest of GTO dollar would also flow but damage because of conducting electricity.

The integrated structure of multiple GTO addition to shutdown beneficial, but also makes GTO thyristor than ordinary speed up the opening process, bear di / dt capability enhanced. Because in the curr...

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The integrated structure of multiple GTO addition to shutdown beneficial, but also makes GTO thyristor than ordinary speed up the opening process, bear di / dt capability enhanced. Because in the current process of opening the door very nearly always start from the beginning, and gradually expand the conduction area. The GTO yuan each cathode area is very small, many GTO yuan at the same time launched a process of cathode on-course speed of the expansion area than one yuan general structure of the thyristor fast, bear di / dt capability also strong.
GTO multiple integrated structure on the manufacturing process made high demands, it must maintain all the requirements GTO yuan of the same. Speed inconsistencies opened at the outset of the opening half GTO yuan due to the current excessive damage; shutdown speed inconsistent, the latest shutdown GTO yuan will damage due to over-current.
Not online translation, thank you啦

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