英语翻译This Integrated Passive Device (IPD) is a filter array,integrating six pi-style (C-R-C) filters to reduceEMI/RFI,and is designed to operate in the AMPS and CDMA 800MHz,GSM 900MHz,DCS 1800MHz,and PCS 1900MHz radiotelephone frequency bands.

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英语翻译ThisIntegratedPassiveDevice(IPD)isafilterarray,integratingsixpi-style(C-R-C)filterstoreduceEMI/R

英语翻译This Integrated Passive Device (IPD) is a filter array,integrating six pi-style (C-R-C) filters to reduceEMI/RFI,and is designed to operate in the AMPS and CDMA 800MHz,GSM 900MHz,DCS 1800MHz,and PCS 1900MHz radiotelephone frequency bands.
英语翻译
This Integrated Passive Device (IPD) is a filter array,integrating six pi-style (C-R-C) filters to reduce
EMI/RFI,and is designed to operate in the AMPS and CDMA 800MHz,GSM 900MHz,DCS 1800MHz,
and PCS 1900MHz radiotelephone frequency bands.The pi-style filter passes signals below 60MHz and
provides 25dB attenuation from 800MHz to 3000MHz.
In addition,the filters provide a very high level of protection for sensitive electronic components that may
be subjected to electrostatic discharge (ESD).The input and output pins are designed and characterized
to safely dissipate ESD strikes of 15kV,well beyond the maximum requirements of the IEC 61000-4-2
international standard.Using the MIL-STD-883D (Method 3015) specification for Human Body Model
(HBM) ESD,the device is protected for contact discharges to greater than 30kV.
The device’s 1.33x2.96mm,15 I/O,0.5mm pitch Chip Scale Package (CSP) has six individual In/Out pistyle
filters and three interconnected ground pins.
5.1.1.1 [X] Channel Series Resistance (see Fig.2 (R1-R6)):100_ ± 20%
5.1.1.2 [X] Single Side Shunt Capacitance + Diode Cjo (see Fig.2 (C1-C12)):30pF± 20%
5.1.1.3 [X] Diode Voltage at 10μA (Reverse Bias):5.5V min.
5.1.1.4 [X] Diode Leakage at 3.3V,25C (Reverse Bias):0.1A max.
5.1.1.5 [X] Signal Voltage at 10mA,Positive Clamp:5.8V min.
9.0V max.
5.1.1.6 [X] Signal Voltage at 10mA,Negative Clamp:–1.5V min.
–0.4V max.
完成后还有追加分

英语翻译This Integrated Passive Device (IPD) is a filter array,integrating six pi-style (C-R-C) filters to reduceEMI/RFI,and is designed to operate in the AMPS and CDMA 800MHz,GSM 900MHz,DCS 1800MHz,and PCS 1900MHz radiotelephone frequency bands.
集成无源器件（IPD）是一个滤波器阵列,集成了六个P型（CRC）滤波器以降低EMI/RFI,设计用于在AMPS和CDMA 800MHz、GSM 900MHz、DCS 1800MHz和PCS 1900 MHz无线电话频带中操作.此外,滤波器还为可能受到静电放电（ESD）干扰的敏感电子元件提供高水平保护.输入输出引脚的设计特性可耗散15KV的ESD冲击,这比IEC61000-4-2国际标准高很多.使用MIL-STD-883D（方法3015）规范人体模型（HBM） ESD时,该器件可在接触放电高于30KV时提供保护.
器件尺寸为1.33x2.96mm,15个I/O,0.5mm引脚间距的芯片级封装（CSP）具备6个独立输入/输出P型滤波器和三个内部相连的接地引脚.
5.1.1.1 [X] 通道串联电阻（见图2 (R1-R6)）：100_ ±20%
5.1.1.2 [X] 单端采样电容 + 二级管Cjo（见图2 (C1-C12)）：30pF±20%
5.1.1.3 [X] 10μA时二极管电压（反向偏置）：最小值5.5V
5.1.1.4 [X] 3.3V、25C时二极管漏电流（反向偏置）：最大值0.1A
5.1.1.5 [X] 10mA、正向钳位时信号电压：最小值5.8V,最大值9.0V
5.1.1.6 [X] 10mA、反向钳位时信号电压：最小值–1.5V,最大值–0.4V

……………………………………太

I faint....

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这种集成无源器件（署）是一种过滤器阵列，集成6丕作风（启联资源中心）的过滤器，以减少
电磁干扰/射频干扰，目的是为了经营，在安培800和CDMA ， GSM的900 MHz时，区议会1800mhz ，
和PCS 1900频段的无线电话。 PI值式过滤器通过信号下面60mhz和
提供25分贝衰减从800 MHz至3000mhz 。
此外，该过滤器提供了很高的水平保护敏感的电子元件可能
受到静电放电（ ESD ）。输入和输出引脚的设计和特点
安全消散公共服务电子化计划的罢工15 kV防，远远超出了最高的要求，国际电工委员会61000-4-2
国际标准。使用美军标MIL - STD - 883d （法3015 ）规格为人体模型
（健康信念模式）公共服务电子化计划，该装置是保护联系排放到大于30kv 。
该器件的1.33x2.96mm ， 15的I / O ， 0.5 mm间距芯片级封装（ CSP ）有6个单独的输入/输出pistyle
过滤器和三个相互关联的接地引脚。
5.1.1.1 [ X ]的渠道串联电阻（见图2 （ R1的- r6 ））： 100_ ± 20 ％
5.1.1.2 [ X ]的单面并联电容+二极管刑事司法管辖权条例（见图2 （的C1 -十二））： 30pf ± 20 ％
5.1.1.3 [ X ]的二极管电压在10 μ 1 （反向偏压）： 5.5 V的敏。
5.1.1.4 [ X ]的二极管泄漏在3.3 V ， 25  C （上扭转偏见）： 0.1 最高。
5.1.1.5 [ X ]的信号电压在一十〇毫安，积极钳： 5.8v分钟。
9.0v最高。
5.1.1.6 [ X ]的信号电压在一十〇毫安，负钳： - 1.5分钟。
- 0.4v最高。

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全部展开

这种集成无源器件（署）是一种过滤器阵列，集成6丕作风（启联资源中心）过滤器，以降低EMI /射频干扰，目的是为了经营，在安培800和CDMA ， GSM的900 MHz时，区议会1800mhz ，和PCS 1900频段的无线电话。 PI值式过滤器通过信号下面60mhz ，并提供25分贝衰减从800 MHz至3000mhz 。
此外，该过滤器提供了很高的水平保护敏感的电子元件可能会受到静电放电（ ESD ）。输入和输出引脚的设计和特点，以安全消散公共服务电子化计划的罢工15 kV防，远远超出了最高的要求，国际电工委员会61000-4-2的国际标准。
使用美军标MIL - STD - 883d （法3015 ）规格为人体模型（健康信念模式）公共服务电子化计划，该装置是保护联系排放到大于30kv 。该器件的1.33x2.96mm ，15的I / O ， 0.5 mm间距芯片级封装（ CSP ）有6个单独的输入/输出pistyle过滤器和三个相互关联的接地引脚。 5.1.1.1 [ X ]的渠道串联电阻（见图2 （ R1的- r6 ））： 100_ ± 20 ％
5.1.1.2 [ X ]的单面并联电容+二极管刑事司法管辖权条例（见图2 （的C1 -十二））： 30pf ± 20 ％
5.1.1.3 [ X ]的二极管电压在10 μ 1 （反向偏压）： 5.5 V的敏。 5.1.1.4 [ X ]的二极管泄漏在3.3 V ， 25  C （上扭转偏见）： 0.1 最高。
5.1.1.5 [ X ]的信号电压在一十〇毫安，积极钳： 5.8v分钟。 9.0v最高。 5.1.1.6 [ X ]的信号电压在一十〇毫安，负钳： - 1.5分钟。 - 0.4v最高。

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