将下列英文翻译成中文,英语高手来,谢绝翻译软件直译!Measurements made on the comparators include small signal gain, rolloff point, and propagation delay. The first two of these are shown in Fig. 6. The low-frequency gain is 55 dB,

将下列英文翻译成中文,英语高手来,谢绝翻译软件直译!Measurements made on the comparators include small signal gain, rolloff point, and propagation delay. The first two of these are shown in Fig. 6. The low-frequency gain is 55 dB,
将下列英文翻译成中文,英语高手来,谢绝翻译软件直译!
Measurements made on the comparators include small signal gain, rolloff point, and propagation delay. The first two of these are shown in Fig. 6. The low-frequency gain is 55 dB, exactly as designed, or a voltage gain of X 560 in a singledriven configuration between 50 S2 terminations. The 3 dB rolloff point is at 130 MHz and the gain at 400 MHz in the test assembly used is 38 dB. Predicted figures were 140 MHz and 42 dB, respectively. Modeling work for this design was based on a straightforward scaling of the 4 pm geometry model, and was thus an oversimplification leading to the slightly optimistic prediction for the new 3 Mm process. A more accurate transistor model would be needed to predict the performance correctly; the experimental results are, nevertheless, good and the relatively small errors justify the simplistic modeling approach in the initial absence of hard data. Transient performance is not significantly different from the prediction. The average propagation delay of the comparators to a 10 mV overdrive signal on a 100 mV pulse is, typically, 1.5 ns; the device measurement illustrated in Fig. 7 is slightly less than this. Output rise and fall times are less than 500 ps in the measurement equipment used, which is representative ofthe practical circuit in many applications. Output voltageswing is nominally over ECL levels, but measurements reported here use an ECLto 50Ω passive translation, which involves an 8:5 voltage attenuation and incidentally some delay and edge slowing. Nordlowance in the figures quoted was made for this network, so on-chip delays are faster than reported for the practical system.

将下列英文翻译成中文,英语高手来,谢绝翻译软件直译!Measurements made on the comparators include small signal gain, rolloff point, and propagation delay. The first two of these are shown in Fig. 6. The low-frequency gain is 55 dB,
比较器的测量包括小信号增益,滚降点,和传输延迟.前两个如图6所示.低频增益为55分贝,完全按照设计,或者是X 560一singledriven配置的电压增益为50 S2的终端.3分贝的滚降点应用于130兆赫终而400兆赫测试组件中应增加至38分贝.预测数字分别为140兆赫和42分贝.这种设计的建模工作是根据下午四点的几何模型直接缩放,并因此导致过于简单化从而对于新的3毫米的推移产生过于乐观的预测.朱雀地预测性能需要一个更加精准的晶体管模型；实验结果必然是好的而且相对误差较小使过于简单的模型接近于初始的数据建模.短暂的效果不能充分显示与预期的不同.该比较器的平均传输延迟为10毫伏在100 mV的脉冲信号过载,一般情况下,1.5毫微秒;如图7所示装置测量结果比这个小.在测量设备上所使用的输出上升和下降时间少于500每秒,这是代表许多应用中的实际电路.输出电压摆幅是名义上的ECL水平,但这里使用的测量报告被译为一个ECL达到50Ω,这涉及一个8:5电压衰减和一些延迟和边缘放缓.在数字中引述的Nordlowance是完全适于网络的,所以在芯片上的延迟快于实际系统中所报告的.
累死我了……