英语翻译1A ,One charge transport mechanism in a semiconductor is carrier drift,which is the flow of carriers due to an applied electric field,B,Carriers reach an average drift velocity due to scattering events in a semiconductor with an applied e

英语翻译1A ,One charge transport mechanism in a semiconductor is carrier drift,which is the flow of carriers due to an applied electric field,B,Carriers reach an average drift velocity due to scattering events in a semiconductor with an applied e
英语翻译
1A ,One charge transport mechanism in a semiconductor is carrier drift,which is the flow of carriers due to an applied electric field,
B,Carriers reach an average drift velocity due to scattering events in a semiconductor with an applied electric field.Two scattering events within a semiconductor are lattice scattering and ionized impurity scattering.
C,The average drift velocity is a linear function of the applied electric field for small values of electric field,but the drift velocity reaches a saturation limit that is on the order of 10七次方cm/s for electric fields on the order of 10四次方V/cm.
D,Carrier mobility is the ratio of the average drift velocity to the applied electric field.The electron and hole mobilities are functions of temperature and of the ionized impurity concentration.
E,The drift current density is the product of conductivity and electric field(a form of Ohm's law).Conductivity is a function of the carrier concentrations and mobilities.Resistivity is the inverse of conductivity.
2,A ,The second charge transport mechanism in a semiconductor is carrier diffusion,which is the flow of charge due to a gradient in carrier concentration.
B,The diffusion current density is proportional to the diffusion coefficient and the gradient in carrier concentration.
3,A,An electric field is induced in a semiconductor in thermal equilibrium that has a nonuniform impurity doping concentration.
B,The diffusion oefficient and mobility are related through the Einstein relation.
4,A,Generation is the process whereby electrons and holes are created; recombination is the process whereby electrons and holes are annihilated.
B,Generation and recombination rates were defined for thermal equilibrium and for nonequilibrium excess carriers.
C,Excess minority-carrier lifetimes were discussed and defined.
5,The Hall effect is a consequence of a charged carrier moving in the presence of perpendicular electric and magnetic fields.The chargeed carrier is deflected,inducing a Hall voltage.The polarity of the Hall voltage is a function of the semiconductor conductivity type.The majority-carrier concentration and mobility can be determined from the Hall volrage.

英语翻译1A ,One charge transport mechanism in a semiconductor is carrier drift,which is the flow of carriers due to an applied electric field,B,Carriers reach an average drift velocity due to scattering events in a semiconductor with an applied e
将英语译成中文(简体)
第1A,充一次电在半导体的传输机制是承运人漂移,这是由于运营商施加电场流,
B,运营商达成的平均漂移速度,由于在半导体散射事件与外加电场.在半导体的两个事件是晶格散射散射和电离杂质散射.
ç,平均漂移速度是一个电场的电场小值的线性函数,但漂移速度达到饱和限制,对10七次方厘米订单/ S对电力领域的顺序10四次方V / cm的.
研发,载流子迁移是平均漂移速度比外加电场.电子和空穴的迁移率是温度和电离杂质浓度的功能.
E的漂移电流密度的电导率和电场（一欧姆定律的形式）的产品.导电的载体功能和mobilities.Resistivity浓度是电导率逆.
2,A,第二个负责半导体的传输机制是载流子扩散,这是由于电荷载体在浓度梯度流.
b,将扩散电流密度成正比的扩散系数和载流子浓度梯度中.
3,A,是诱发电场在半导体中的热平衡,有一个非均匀掺杂的杂质浓度.
B,扩散和移动性相关oefficient通过爱因斯坦的关系.
4,A,发电,使电子和空穴的创建过程,即重组是电子和空穴被消灭的过程.
B,发电和重组率被定义为热平衡和非平衡过剩的载体.
ç,过剩少数载流子寿命进行了讨论和界定.
5,霍尔效应是一种带电的垂直的电场和磁场的存在运动载体的结果.承运人的chargeed偏转,诱导霍尔电压.霍尔电压的极性是一种半导体导电类型的功能.多数载流子浓度和迁移率可以由霍尔volrage.
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