英语翻译ABSTRACTNew applications of evanescent imaging for microlithography are introduced.The use of evanescent wave lithography (EWL) has been employed for 26nm resolution at 1.85NA using a 193nm ArF excimer laser wavelength to record images in

英语翻译ABSTRACTNew applications of evanescent imaging for microlithography are introduced.The use of evanescent wave lithography (EWL) has been employed for 26nm resolution at 1.85NA using a 193nm ArF excimer laser wavelength to record images in
英语翻译
ABSTRACT
New applications of evanescent imaging for microlithography are introduced.The use of evanescent wave lithography (EWL) has been employed for 26nm resolution at 1.85NA using a 193nm ArF excimer laser wavelength to record images in a photoresist with a refractive index of 1.71.Additionally,a photomask enhancement effect is described using evanescent wave assist features (EWAF) to take advantage of the coupling of the evanescent energy bound at the substrate-absorber surface,enhancing the transmission of a mask opening through coupled interference.
INTRODUCTION
The pursuit of optical lithography at sub-wavelength dimensions leads to limitations imposed by classical rules of diffraction.Previously,we reported on the use of near-field propagation in the evanescent field through a solid immersion lens gap for lithography at numerical apertures approaching the refractive index of 193nm ArF photoresist.1
Other groups have also described achievements with various configurations of a solid immersion lens for photolithography within the refractive index limitations imposed by the image recording media,a general requirement for the frustration of the evanescent field for propagation and detection.2-4 We have extended the resolution of projection lithography beyond the refractive index constraints of the recording media by direct imaging of the evanescent field into a photoresist layer with a refractive index substantially lower than the numerical aperture of the imaging system.
In addition to the potential enabled through the detection of the evanescent field at the image plane,coupling of the surface bound evanescent field at the photomask object plane can lead to a near field enhancement of the far field image.We also report on these two phenomena and their applications here.
需要翻译的部分不长,要人工翻译,软件的就不用了

英语翻译ABSTRACTNew applications of evanescent imaging for microlithography are introduced.The use of evanescent wave lithography (EWL) has been employed for 26nm resolution at 1.85NA using a 193nm ArF excimer laser wavelength to record images in
摘要
本文介绍了倏逝成像技术在显微光刻法中新的应用.倏逝波光刻技术,主要通过193nm波长ArF激元激光器来记录折射率为1.71的光刻胶上的图像,以达到在1.85NA的26nm分辨率水平.
除此之外,通过倏逝波辅助特征来借助底层-吸收层交界处的倏逝能量边界情况,能够很好地描述光掩模增强效应,并增强掩模的在耦合干扰情况下的传输率.
介绍
人们在亚波长范围内的光刻技术的发展,会受到经典光学衍射规律的限制.我们曾经报道过利用倏逝场在固体浸没透镜间隙的极短距离内传播来进行光刻.这些固体浸没透镜都有
量化的接近193nm ArF 光刻胶折射率的孔.
1其他小组还描述了在图像记录设备带来的折射率限制条件（这也是倏逝场的传播和探测上的不便所带来的总体要求）下利用不同的
固体浸没透镜配置来进行光刻的成果.
2-4 我们还通过直接将倏逝场成像在光刻胶层（其折射率大大低于成像系统的数值的孔）,使光刻的成像投射技术超越了记录设备的折射率限制.
在光掩模目标平板的表面边界倏逝场耦合,潜在能够对通过成像平面的倏逝场检测来完成,并能够使远距离场图像得到近距离场的增强.我们也会在此报道这两种现象和它们的相关应用.
我是工科专业的,英语没问题,不过对介绍的这一块不怎么熟悉,LZ可以试试看看.