一篇science direct 上的文章要翻译题目叫Initiation of interface crack at free edge between thin films with weak stress singularity 作者Takayuki Kitamura Hiroyuki Hirakata Do Van Truong 发到邮箱[email protected] 我要的是内容翻

一篇science direct 上的文章要翻译题目叫Initiation of interface crack at free edge between thin films with weak stress singularity 作者Takayuki Kitamura Hiroyuki Hirakata Do Van Truong 发到邮箱[email protected] 我要的是内容翻
一篇science direct 上的文章
要翻译
题目叫Initiation of interface crack at free edge between thin films with weak stress singularity 作者Takayuki Kitamura Hiroyuki Hirakata Do Van Truong 发到邮箱[email protected] 我要的是内容翻译

一篇science direct 上的文章要翻译题目叫Initiation of interface crack at free edge between thin films with weak stress singularity 作者Takayuki Kitamura Hiroyuki Hirakata Do Van Truong 发到邮箱[email protected] 我要的是内容翻
Delamination tests using sandwich type specimens are conducted for eight combinations of materials:thin films formed on silicon substrates which are relatively popular in micro-electronic industry,to develop a method for quantitative evaluation and comparison of crack initiation strength at the free edge.The difficulty stems from the difference of stress singularity,K-ij/r(lambda) (K-ij:stress intensity,r:distance from free edge and lambda:order of stress singularity),where lambda is depending on the combination of materials.Thus,the critical K-ij has different dimensions,MPa m(lambda),in each interface.Using the experimentally observed delamination load,the stress distribution along the interface is analyzed by boundary element method.Since the orders of stress singularity,lambda,in the materials are less than 0.07 (weak singularity),the stress field near the interface edge is almost constant in atomic (nanometer) level.Then,the critical strength for the interface cracking is quantitatively represented by the concentrated stress near the edge.The effects of the several factors such as species of thin films,oxidized interlayers and deposition processes of thin films on the interface strength are evaluated on the basis of this critical stress as well.(c) 2006 Elsevier B.V.All rights reserved.
是不是这篇啊?如果是,以下是翻译!希望能给楼主帮助!
分层测试使用夹心模式标本是八材料：硅衬底上是相对微电子行业流行,形成薄膜进行组合,在自由的边缘发展为定量评价和比较法裂纹萌生的力量.困难来自于不同的应力奇异性,钾,交叉路/住宅（拉姆达）（钾交叉路：应力强度,记：从自由边缘的距离和lambda：订单压力奇异）,其中拉姆达是在不同的材料组合.因此,关键的K -交叉路有不同的尺寸,兆帕米（λ）,在每个接口.使用分层负载实验观察,沿界面应力分布的边界元法进行分析.由于应力奇异性,拉姆达的材料,订单小于0.07（弱奇异）,界面边缘附近的应力场中的原子几乎是常数（纳米）的水平.然后,为打击接口的关键力量是定量的边缘附近的应力集中代表.如薄膜,氧化夹层和薄膜沉积过程中物种对界面强度的几个因素的影响进行评价,这一临界应力提供了基础.（三）2006爱思唯尔B.诉保留所有权利.
没错吧!希望楼主给点分啊?我打字好辛苦的啊!

界面裂纹萌生于薄膜和自由边应力异常弱