英语翻译The fact that the intensity of emission is related to the doped-Ti content implies that the doped-Ti ion is the origin of this broad emission peak at 565nm.As a consequence of reducing atmosphere during sample processing and the charge ba

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英语翻译Thefactthattheintensityofemissionisrelatedtothedoped-Ticontentimpliesthatthedoped-Tiionistheorig

英语翻译The fact that the intensity of emission is related to the doped-Ti content implies that the doped-Ti ion is the origin of this broad emission peak at 565nm.As a consequence of reducing atmosphere during sample processing and the charge ba
英语翻译
The fact that the intensity of emission is related to the doped-Ti content implies that the doped-Ti ion is the origin of this broad emission peak at 565nm.As a consequence of reducing atmosphere during sample processing and the charge balancerequirement under high doping concentration for Ti ions,mixture valence states of Ti (Ti2+,Ti3+ and Ti4+) ions with different ratio may exist together in the present samples.The charge transition mechanism of the luminescence center,
a major mechanism for luminescence,can be neglected in the present material as the charge transfer of Ti2+,Ti3+ or Ti4+ions give their emission peaks in the range from 600nm to the IR region [15–17].For example,the 565nm band
cannot be attributed to the T-E characteristic transition of Ti3+ because no obvious absorption band around 570nm of Ti3+ ion is detected in our samples.Moreover,the lifetime of a simple transition from Ti3+ ion is only about several ms and it cannot produce the 565nm long afterglow emission without the aid of other defects as
trapping energy level [18].Although sufficient experimental data at the present stage are still lacking for a clear explanation about the origin of the 565 nm emission band,we consider that this yellow broad emission band (565 nm) can be attributed to recombination of the trapped electrons which are thermally released in the donating
level introduced by Ti4+ ions substitution for Y3+ ions and the holes in the accepting level introduced by Ti2+ ions substitution for Y3+ ions.
谢绝用翻译软件翻译的答案,如果翻译的好,还会接着追加分数的,)

英语翻译The fact that the intensity of emission is related to the doped-Ti content implies that the doped-Ti ion is the origin of this broad emission peak at 565nm.As a consequence of reducing atmosphere during sample processing and the charge ba
发射密度与掺杂过的钛含量有关,这一事实表明:掺杂过的钛离子是565mm处宽发射峰出现的原因.由于样品处理过程中的还原空气以及钛离子高掺杂密度下的电荷平衡要求,不同比率的钛(Ti2+, Ti3+ and Ti4+)离子的混合价态可能共存于当前样品中.在当前材料中可以忽视一个主要的发光原理——发光中心的荷载转换原理,因为Ti2+、Ti3+ 或Ti4+离子的荷载转换产生了发射峰,范围从600nm到IR区【15-17】.例如,不能把Ti3+的T-E特征性转换看作565nm谱带的原因,因为在我们的样品中,在Ti3+离子570nm周围并没有检测到明显的吸收谱带.而且,Ti3+ ion的简单转变的整个时间只有大约几毫秒,没有缺陷捕获能及的话,它不可能产生565nm长的余辉发射【18】.尽管在当前阶段我们缺少充足的实验数据就565nm发射频带的来源作出清楚的解释, 但是我们认为:此黄色的,宽发射谱带(565nm)的产生可以归因于捕获电子的重组,这些电子以热解的形式释放,在转移层面上Ti4+离子替代Y3+离子,而在接收侧面,Ti2+离子则代替Y3+离子.
这是我手工翻译的,因为我不是这个专业的,可能专业术语不是很恰当,但希望你可以看的懂.

因此,关于排放强度与掺杂钛含量的事实意味着,掺杂钛离子是本宽发射峰在565nm的起源。作为减少在样品处理和在高钛离子掺杂浓度为负责balancerequirement,钛混合价态大气(+的TI2后果,
不同比例Ti3 +和的Ti4 +)离子可能同时存在于目前的样本。该中心负责发光的过渡机制,
一个发光的主要机制,可以忽略不计的作为的TI2 +,Ti3目前材料+电荷转移或Ti4 +离...

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因此,关于排放强度与掺杂钛含量的事实意味着,掺杂钛离子是本宽发射峰在565nm的起源。作为减少在样品处理和在高钛离子掺杂浓度为负责balancerequirement,钛混合价态大气(+的TI2后果,
不同比例Ti3 +和的Ti4 +)离子可能同时存在于目前的样本。该中心负责发光的过渡机制,
一个发光的主要机制,可以忽略不计的作为的TI2 +,Ti3目前材料+电荷转移或Ti4 +离子给予范围从600nm波长的红外区域的发射峰[15-17]。例如,565nm的波段
不能归咎于到TE的Ti3 +过渡特征,因为没有周围的Ti3 +离子的570nm波长明显的吸收带是在我们的样本中发现。此外,从简单的过渡Ti3 +离子的寿命大约只有几毫秒,它不能产生没有其他缺陷援助为565nm的发射长余辉
俘获能级[18]。虽然在目前阶段仍然有足够的实验数据为有关的565 nm的发射带源缺乏明确的解释,我们认为这黄色的宽发射带(565纳米)可以归因于它是热的释放被困电子重组在捐赠
水平引入替代的Ti4 +离子掺杂对离子和接受程度与标准的TI2 +离子对Y3 +的离子置换引入孔。

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因此,关于排放强度与掺杂钛含量的事实意味着,掺杂钛离子是本宽发射峰在565nm的起源。作为减少在样品处理和在高钛离子掺杂浓度为负责balancerequirement,混合价态的Ti气氛后果(标准的TI2 +,Ti3 +和钛离子)与不同比例离子可能同时存在于目前的样本。该中心负责发光的过渡机制,
一个发光的主要机制,可以忽略不计的作为的TI2 +,Ti3目前材料+电荷转移或Ti4 +离子...

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因此,关于排放强度与掺杂钛含量的事实意味着,掺杂钛离子是本宽发射峰在565nm的起源。作为减少在样品处理和在高钛离子掺杂浓度为负责balancerequirement,混合价态的Ti气氛后果(标准的TI2 +,Ti3 +和钛离子)与不同比例离子可能同时存在于目前的样本。该中心负责发光的过渡机制,
一个发光的主要机制,可以忽略不计的作为的TI2 +,Ti3目前材料+电荷转移或Ti4 +离子给予范围从600nm波长的红外区域的发射峰[15-17]。例如,565nm的波段
不能归咎于到TE的Ti3 +过渡特征,因没有周围的Ti3 +离子的570nm波长明显的吸收带是在我们的样本中发现。此外,从简单的过渡Ti3 +离子的寿命大约只有几毫秒,它不能产生没有其他缺陷援助为565nm的发射长余辉
俘获能级[18]。虽然在目前阶段仍然有足够的实验数据为有关的565 nm的发射带源缺乏明确的解释,我们认为这黄色的宽发射带(565纳米)可以归因于它是热的释放被困电子重组在捐赠
水平引入替代的Ti4 +离子掺杂对离子和接受程度与标准的TI2 +离子对Y3 +的离子置换引入孔

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这一事实排放强度有关内容doped-Ti意味着doped-Ti离子广阔的起源在565nm发射波长。由于在还原性气氛来样加工,费用balancerequirement在高掺杂浓度为钛离子,混合价的状态Ti2 +,Ti3钛(或以上)+和四可能存在不同配比离子一起在目前的样品。转换机制负责发光中心,
一个主要的机制可以忽略发光本材料的电荷转移Ti2 +,Ti3 +或四+离子给他们的排放的山峰在范...

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这一事实排放强度有关内容doped-Ti意味着doped-Ti离子广阔的起源在565nm发射波长。由于在还原性气氛来样加工,费用balancerequirement在高掺杂浓度为钛离子,混合价的状态Ti2 +,Ti3钛(或以上)+和四可能存在不同配比离子一起在目前的样品。转换机制负责发光中心,
一个主要的机制可以忽略发光本材料的电荷转移Ti2 +,Ti3 +或四+离子给他们的排放的山峰在范围从600红外地区,[15 - 17)。例如,565nm乐队
不能归咎于T-E过渡的特点Ti3 +因为没有明显的570nm带在吸收Ti3 +离子发现我们的样品。此外,从简单的过渡的生命周期Ti3 +离子大约只有几个ms和它不能产生565nm长晚霞发射不用借助其他缺陷的
捕获能级(18)。虽然足够的实验数据现阶段仍不够有一个明确的解释该回到正题上的起源排放乐队,我们之认为这一黄广泛的发射的乐队(565海里)重组,可以归因于被困住的电子发表在热的捐助
介绍了+离子水平四替代穗+离子和孔的接受程度Ti2 +离子推出替代穗+离子

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