这个文章什么意思啊?LDO?The proposed LDO has been implemented in AMS doublepolytriple-metal 0.35- m CMOS technology. The thresholdvoltages of nMOSFET and pMOSFET are 0.55 V and 0.75 V,respectively. The chip micrograph is shown in Fig. 7, and
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这个文章什么意思啊?LDO?The proposed LDO has been implemented in AMS doublepolytriple-metal 0.35- m CMOS technology. The thresholdvoltages of nMOSFET and pMOSFET are 0.55 V and 0.75 V,respectively. The chip micrograph is shown in Fig. 7, and
这个文章什么意思啊?LDO?
The proposed LDO has been implemented in AMS doublepoly
triple-metal 0.35- m CMOS technology. The threshold
voltages of nMOSFET and pMOSFET are 0.55 V and 0.75 V,
respectively. The chip micrograph is shown in Fig. 7, and the
active silicon area is 236 m* 529 m, excluding the testing
pads. The LDO can operate down to 1.2 V with a preset output
voltage of 1 V. The dropout voltage at output current of 100 mA
is 200 mV. The maximum ground current is about 100 A at
Vin=3.3V. The measured results are in Table II.我不是学这个的,实在是.鸡肋,后面还有.这个翻译好我一定加分的,在线等.
这个文章什么意思啊?LDO?The proposed LDO has been implemented in AMS doublepolytriple-metal 0.35- m CMOS technology. The thresholdvoltages of nMOSFET and pMOSFET are 0.55 V and 0.75 V,respectively. The chip micrograph is shown in Fig. 7, and
这颗推荐的LDO用的是AMS 的0.35nm CMOS两层poly 三层metal工艺.Nmos和Pmos的截止电压分别接近是0.55v和0.75v.芯片物理层见于第七页,算上测试pad版图的面积是236*529（单位你给的不对吧?） .这颗LDO在输出为1v时工作的最低电压是1.2v.在输出电流为100ma时,ldo的压降为200mv.当输入电压为3.3v时,最大对地电流可以达到100a.测试结果在图2.
好久不碰了,求其他大牛指点.