英语翻译We note that in solar cell application,the nanowire arraysamples grown directly on the FTO coated glass sometimesdemonstrated electrical shorting with the redox electrolytecoming into direct contact with the FTO layer.Hence,forsolar cell

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英语翻译Wenotethatinsolarcellapplication,thenanowirearraysamplesgrowndirectlyontheFTOcoatedglasssometime

英语翻译We note that in solar cell application,the nanowire arraysamples grown directly on the FTO coated glass sometimesdemonstrated electrical shorting with the redox electrolytecoming into direct contact with the FTO layer.Hence,forsolar cell
英语翻译
We note that in solar cell application,the nanowire array
samples grown directly on the FTO coated glass sometimes
demonstrated electrical shorting with the redox electrolyte
coming into direct contact with the FTO layer.Hence,for
solar cell use,before growing the nanowire arrays a compact
TiO2 layer approximately 20 nm thick was commonly
deposited onto the well-cleaned FTO glass substrate by
immersion in a 0.2 M TiCl4 solution for 12 h,then heated
in air at 500 °C for 0.5 h.31 Such a layer does not appear to
affect nanowire growth while greatly enhancing sample
integrity for solar cell use.
急求此段的翻译,不要谷歌翻译的.

英语翻译We note that in solar cell application,the nanowire arraysamples grown directly on the FTO coated glass sometimesdemonstrated electrical shorting with the redox electrolytecoming into direct contact with the FTO layer.Hence,forsolar cell
我们注意到,在太阳能电池的应用方面,直接在FTO镀膜处理过的玻璃表面生长的纳米线阵列样本,有时可以显示出氧化还原电解质与FTO膜层直接接触引发的电气短路.因此,对于太阳能电池的应用,在生长纳米线阵列之前,一般需要有一层紧密排列的,大约20纳米厚二氧化钛层沉积到洗净的FTO玻璃基板.这种基板的制备是把基板浸没在0.2M TiCl4 12小时,然后空气加热到500 摄氏度,0.5 h.[这个31是参考文献31吗?]这种层并不影响纳米线增长,但同时大大提高纳米线样品在太阳能电池应用方面的完整性.

你看看吧，大体就是这样了
我们注意到在太阳的细胞申请中， nanowire 布署在 FTO 上直接地生长的样品有时外面复盖玻璃了被示范的电的短用 redox 电解物来临进入直接的连络之内和 FTO 层。因此，为太阳的细胞使用，在增加 nanowire 之前布署一个小型房车TiO2 层大约 20个 nm 厚地普遍在清理良好 FTO 玻璃基体之上存放被浸渍在这 0.2 MTiCl4 解决方面为...

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你看看吧，大体就是这样了
我们注意到在太阳的细胞申请中， nanowire 布署在 FTO 上直接地生长的样品有时外面复盖玻璃了被示范的电的短用 redox 电解物来临进入直接的连络之内和 FTO 层。因此，为太阳的细胞使用，在增加 nanowire 之前布署一个小型房车TiO2 层大约 20个 nm 厚地普遍在清理良好 FTO 玻璃基体之上存放被浸渍在这 0.2 MTiCl4 解决方面为 12 h，然后加热在 500 °C 的空气中为 0.5 h。31如此的层似乎不到在非常提高样品的同时，影响 nanowire 生长
给太阳的细胞正直使用。

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我们注意到在太阳能电池中的应用,nanowire阵列 不过直接进行镀膜玻璃的时候 展示与还原电卖空电解质 进入直接接触不过层。因此, 太阳能电池使用的有序阵列之前,一个紧凑的增长 大约20海里二氧化钛层厚一般 不过在well-cleaned存放的玻璃基片 沉浸在0.2 M TiCl4 12小时,然后解决方案 在空中,在500℃0.5 h.31这样一个...

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我们注意到在太阳能电池中的应用,nanowire阵列 不过直接进行镀膜玻璃的时候 展示与还原电卖空电解质 进入直接接触不过层。因此, 太阳能电池使用的有序阵列之前,一个紧凑的增长 大约20海里二氧化钛层厚一般 不过在well-cleaned存放的玻璃基片 沉浸在0.2 M TiCl4 12小时,然后解决方案 在空中,在500℃0.5 h.31这样一个图层不出现 nanowire影响经济增长,同时大大提高样本 完整的太阳能电池使用。

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