英语翻译The optimum conditions for the production of amorphous SiO2 nanowires are:an atmosphereof Ar (51.99 kPa) and O2 (1.33 kPa),at 1300\21500\3 and in the presence of TiSi covering Tifoil.But before heating to its melting point,a decompose rea

英语翻译The optimum conditions for the production of amorphous SiO2 nanowires are:an atmosphereof Ar (51.99 kPa) and O2 (1.33 kPa),at 1300\21500\3 and in the presence of TiSi covering Tifoil.But before heating to its melting point,a decompose rea
英语翻译
The optimum conditions for the production of amorphous SiO2 nanowires are:an atmosphereof Ar (51.99 kPa) and O2 (1.33 kPa),at 1300\21500\3 and in the presence of TiSi covering Tifoil.But before heating to its melting point,a decompose reaction for TiSi takes place at a pressureof Pθ,according to this reason we here advance a plausible partial explanation of these resultsinvolving a thermal decompose reaction of TiSiTiSiTi+Si (1)leading to the formation vapor Si.The Si then immediately reacts with O2 to form SiO2 at the experimentaltemperature:Si+O2SiO2 (2)Fig.1.Design of the chamber for the heating experiment.No.4 A NOVEL CHEMICAL ROUTE TO SiO2 NANOWIRES 391Fig.2.(a) White product growing on the Ti foil surface,(b) large quantities of the nanowires of smooth surface and uniformdiameter,(c) HRTEM image of the nanowires,(d) EDX analyses of individual nanowire.The SiO2 from eq.(2) condense solid SiO2 .As long as nuclei formed,i.e.shorter nanowires,thermalflow occurs along the nanowire axis,hence the nanowire growth continues along thisnanowire axis.So heat is dissipating along a and c axes[8] (fig.3(a)),so that this growth processremains thermodynamic balance.Finally,the very long SiO2 nanowires are formed.The amorphousSiO2 nanowires are believed to form by chemical reactions and analogous growth mechanismsinvolving a vapor-liquid-solid process.Fig.

英语翻译The optimum conditions for the production of amorphous SiO2 nanowires are:an atmosphereof Ar (51.99 kPa) and O2 (1.33 kPa),at 1300\21500\3 and in the presence of TiSi covering Tifoil.But before heating to its melting point,a decompose rea
The optimum conditions for the production of amorphous SiO2 nanowires are:an atmosphere of Ar (51.99 kPa) and O2 (1.33 kPa),at 1300 1500 and in the presence of TiSi covering Ti foil.
生产非晶SiO2纳米线的最佳条件是：环境为Ar（51.99 kPa）,O2（1.33 kPa）,1300 1500 ；且有TiSi覆盖钛箔.
But before heating to its melting point,a decompose reaction for TiSi takes place at a pressure of Pθ,according to this reason we here advance a plausible partial explanation of these results involving a thermal decompose reaction of TiSiTiSiTi+Si (1) leading to the formation vapor Si.
但在加热到其熔点之前,当压力为Pθ时发生了TiSi的分解反应,据此,我们在此对这些结果提出一个合理的局部解释,这些结果涉及导致形成气相Si的TiSiTiSiTi+Si (1)的热分解反应.
The Si then immediately reacts with O2 to form SiO2 at the experimental temperature:Si+O2SiO2 (2) Fig.1.Design of the chamber for the heating experiment.No.4 A NOVEL CHEMICAL ROUTE TO SiO2 NANOWIRES 391
之后,Si立即与O2反应,并在实验温度下形成SiO2：Si+O2SiO2 (2) .图1---加热试验的箱室设计.第4：获得/制备SiO2纳米线391的一种新化学路线.
Fig.2.(a) White product growing on the Ti foil surface,(b) large quantities of the nanowires of smooth surface and uniform diameter,(c) HRTEM image of the nanowires,(d) EDX analyses of individual nanowire.
图2（a）在钛箔表面生长的白色生成物,（b）大量表面光滑且直径均匀的纳米线,（c）纳米线的HRTEM图像,（d）单个纳米线的EDX分析.
The SiO2 from eq.(2) condense solid SiO2.
从式(2)浓缩固体SiO2得到的SiO2.
As long as nuclei formed,i.e.shorter nanowires,thermal flow occurs along the nanowire axis,hence the nanowire growth continues along this nanowire axis.
由于形成了核（即较短的纳米线）,沿纳米线轴线就出现了热流量,因而纳米线的生长得以沿该纳米线轴线继续.
So heat is dissipating along a and c axes [8] (fig.3(a)),so that this growth process remains thermodynamic balance.
因此热量沿a、c轴线消散[8]（图3（a））,以便使这一增长过程保持热力学平衡.
Finally,the very long SiO2 nanowires are formed.
最后,形成了很长的SiO2纳米线.
The amorphous SiO2 nanowires are believed to form by chemical reactions and analogous growth mechanisms involving a vapor-liquid-solid process.
通过化学反应和同功生长机制（包括气态-液态-固态过程）形式非晶SiO2纳米线得到证实.

在最佳条件下…

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用于生产无定形SiO 2纳米线的最佳条件是：氩气（51.9千帕）和氧气（1.33千帕）的氛围，在1300 1500下，以及存在覆盖Ti箔的TiSii。但加热到其熔点之前，TiSi在Pθ的压力下发生分解反应，根据这个原因，我们在这里提前对这些结果做合理的部分解释，这涉及导致形成蒸汽...

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我的翻译贴上来，可提示太简略，发不出去，现重发，手工翻译，保证符合专业。我发到你私信里，你看着满意就采纳好吗？
用于生产无定形SiO 2纳米线的最佳条件是：氩气（51.9千帕）和氧气（1.33千帕）的氛围，在1300 1500下，以及存在覆盖Ti箔的TiSii。但加热到其熔点之前，TiSi在Pθ的压力下发生分解反应，根据这个原因，我们在这里提前对这些结果做合理的部分解释，这涉及导致形成蒸汽Si的TiSiTiSiTi +Si的分解反应（1）。然后Si在实验温度下立即与O2反应而形成SiO 2：Si+ O2SiO2 （2 ）图1 。加热实验用腔室的设计。第4. 一种实现SiO2纳米线391的新的化学途径。Fig .2 （a）在钛箔表面白色产物的生长， （b）大量表面光滑，直径均匀的纳米线， （c）纳米线的高分辨透射电子显微镜图像， （d）单根纳米线的能量分散X射线分析。SiO 2从式（2）中凝结为固体SiO 2。只要晶核形成，即较短的纳米线形成，沿纳米线轴向就发生热量流动，因此纳米线将沿着这条纳米线轴线继续生长。所以热沿a和c轴消散[8]（图3（a ） ），因此这种生长过程将保持热力学平衡。最后，形成很长的SiO2纳米线。无定形的SiO 2纳米线被认为是由化学反应所形成，而模拟的生长机理涉及到气 - 液 - 固过程类似的生长机制。图。

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无定形二氧化硅纳米线的生产的最优条件是:,在和i覆盖的存在。但在加热到熔点,在高达发生分解反应根据这个原因我们在这里提前合理的部分解释这些 Si的热降解反应(1)形成了蒸汽。然后Si立即与O2反应t
（希望我的回答令你满意，如果满意，请点击我的回答下方的选为满意答案按钮，谢谢！）这。。没翻译完全吧。。。无定形二氧化硅纳米线的生产的最优条件是:一个atmosphereof Ar(51.99 ...

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无定形二氧化硅纳米线的生产的最优条件是:,在和i覆盖的存在。但在加热到熔点,在高达发生分解反应根据这个原因我们在这里提前合理的部分解释这些 Si的热降解反应(1)形成了蒸汽。然后Si立即与O2反应t
（希望我的回答令你满意，如果满意，请点击我的回答下方的选为满意答案按钮，谢谢！）

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