英语翻译In a preceding section on the forward characteristics of a pn junction diode,we have implicitly assumed that there is no carrier generation and recombination within the space-charge region.However,the bias changes the carrier concentratio
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英语翻译In a preceding section on the forward characteristics of a pn junction diode,we have implicitly assumed that there is no carrier generation and recombination within the space-charge region.However,the bias changes the carrier concentratio
英语翻译
In a preceding section on the forward characteristics of a pn junction diode,we have implicitly assumed that there is no carrier generation and recombination within the space-charge region.However,the bias changes the carrier concentration at the edges of the space-charge layer,so that pn!=n^2.Carrier generation and recombination do occur in the transition region and also contribute to current.
pn!=n^2 专业术语 可不翻译!
英语翻译In a preceding section on the forward characteristics of a pn junction diode,we have implicitly assumed that there is no carrier generation and recombination within the space-charge region.However,the bias changes the carrier concentratio
在上一节讨论PN结二极管的正向特性中,我们隐含假设在空间电荷区没有载流子的产生和重新结合.但是偏压改变了空间电荷层边缘的载流子浓度,所以 PN != N2. 载流子的产生和重新结合在过渡区的确会发生,也会产生电流.